SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-1 of 1 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
低损伤PECVD沉积致密SiO2的方法 专利
专利类型: 发明, 申请日期: 2008-05-07, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈宇;  王良臣;  伊晓燕;  李艳
Adobe PDF(386Kb)  |  Favorite  |  View/Download:1361/257  |  Submit date:2009/06/11