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Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Deng X;  Wang W;  Han S;  Povolny H;  Du W;  Liao X;  Xiang X;  Liao X Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Adobe PDF(635Kb)  |  收藏  |  浏览/下载：1443/437  |  提交时间：2010/11/15
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1290/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb  
Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1), THESSALONIKI, GREECE, AUG 09-13, 1998
作者:  Liu NZ;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Ge WK;  Sou IK;  Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1155/186  |  提交时间：2010/11/15
Absorption-edge  Strains  Zns