Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots
	Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG; Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	9th International Conference on High Pressure Semiconductor Physics (HPSP9)
会议录名称	PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1)
页码	157-162
会议日期	SEP 24-28, 2000
会议地点	SAPPORO, JAPAN
出版地	PO BOX 10 11 61, D-69451 BERLIN, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0370-1972
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.
关键词	Hydrostatic-pressure Photoluminescence Gaas Luminescence Growth Insb Gasb
学科领域	半导体物理
主办者	Hokkaido Univ, Grad Sch Sci.; Phys Soc Japan.; Japan Soc High Pressure Sci & Technol.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14959
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li GH,Chen Y,Fung ZL,et al. Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots[C]. PO BOX 10 11 61, D-69451 BERLIN, GERMANY:WILEY-V C H VERLAG GMBH,2001:157-162.

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