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Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
作者:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Adobe PDF(392Kb)  |  收藏  |  浏览/下载：1597/344  |  提交时间：2010/03/09
Alxga1-xn  
Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing - art. no. 68240N 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Zhao LJ;  Zhang J;  Wang L;  Cheng YB;  Pan JQ;  Liu HB;  Zhu HL;  Zhou F;  Bian J;  Wang BJ;  Zhu NH;  Wei W;  Zhao, LJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(375Kb)  |  收藏  |  浏览/下载：2222/579  |  提交时间：2010/03/09
Tunable Lasers  
An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(328Kb)  |  收藏  |  浏览/下载：1235/276  |  提交时间：2010/03/09
SHicon-based resonant-cavity-enhanced photodetectors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Cheng BW (Cheng Buwen);  Li CB (Li Chuanbo);  Mao RW (Mao Rongwei);  Yao F (Yao Fei);  Xue CL (Xue Chunlai);  Zhang JG (Zhang Jianguo);  Shi WH (Shi Wenhua);  Zuo YH (Zuo Yuhua);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(288Kb)  |  收藏  |  浏览/下载：1420/338  |  提交时间：2010/03/29
High-speed  
Si-based membrane resonant cavity enhanced photodetectors 会议论文
2005 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005
作者:  Cheng BW;  Yao F;  Xue CL;  Zhang JU;  Mao RW;  Li CB;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(481Kb)  |  收藏  |  浏览/下载：1886/368  |  提交时间：2010/03/29
1.3 Mu-m  
Intense room temperature near infrared emission from Al (3+) and Yb3+ ions 会议论文
2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Hong Kong, PEOPLES R CHINA, SEP 29-OCT 01, 2004
作者:  Zhang JG;  Cheng BW;  Gao, JH;  Yu JZ;  Wang QM;  Zhang, JG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(190Kb)  |  收藏  |  浏览/下载：1203/273  |  提交时间：2010/03/29
Fluorescence  
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1162/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Liu WK;  Lin SM;  Wu S;  Cheng P;  Zhang CS;  Liu WK Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：1357/364  |  提交时间：2010/10/29
Birefringence  Polarization  Vcsel  
In situ annealing during the growth of relaxed SiGe 会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:  Li DZ;  Huang CJ;  Cheng BW;  Wang HJ;  Yu Z;  Zhang CH;  Yu JZ;  Wang QM;  Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)  |  收藏  |  浏览/下载：1145/204  |  提交时间：2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition  Sige  Refractive High Energy Electron Diffraction  Tansmission Electron Microscopy  Double Crystal X-ray Diffraction  Mobility 2-dimensional Electron  Critical Thickness  Strained Layers  Ge  Relaxation  Epilayers  Si1-xgex  Gesi/si  Gases  
Design and fabrication of GaAs OMIST photodetector 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Kang XJ;  Lin SM;  Liao QW;  Gao JH;  Liu SA;  Cheng P;  Wang HJ;  Zhang CH;  Wang QM;  Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1625/479  |  提交时间：2010/10/29
Photodetector  Oxidation  Materials Growth