SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films
Zhao L; Lu ZX; Cheng CJ; Zhao DG; Zhu JJ; Sun BJ; Qu B; Zhang XF; Sun WG; Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
2009
Conference NameInternational Materials Research Conference
Source PublicationMATERIALS RESEARCH
PagesPTS 1 AND 2,610-613,: 598-603 Part 1-2
Conference DateJUN 09-12, 2008
Conference PlaceChongqing, PEOPLES R CHINA
Publication PlaceLAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
PublisherTRANS TECH PUBLICATIONS LTD
ISSN0255-5476
metadata_83[zhao, lan; lu, zhengxiong; cheng, caijing; zhang, xiangfeng; sun, weiguo] luoyang optoelect inst, luoyang, peoples r china; [zhao, degang; zhu, jianjun; sun, baojuan] chinese acad sci, inst semicond, beijing 100083, peoples r china; [qu, bo] jordan valley semicond uk ltd, durham, england
AbstractThe correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.
KeywordAlxga1-xn
Subject Area半导体材料
Funding OrganizationMat Res Soc.; Chinese Mat Res Soc.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/8312
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Recommended Citation
GB/T 7714
Zhao L,Lu ZX,Cheng CJ,et al. Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2009:PTS 1 AND 2,610-613,: 598-603 Part 1-2.
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