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Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films | |
Zhao L; Lu ZX; Cheng CJ; Zhao DG![]() ![]() | |
2009 | |
Conference Name | International Materials Research Conference |
Source Publication | MATERIALS RESEARCH |
Pages | PTS 1 AND 2,610-613,: 598-603 Part 1-2 |
Conference Date | JUN 09-12, 2008 |
Conference Place | Chongqing, PEOPLES R CHINA |
Publication Place | LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND |
Publisher | TRANS TECH PUBLICATIONS LTD |
ISSN | 0255-5476 |
metadata_83 | [zhao, lan; lu, zhengxiong; cheng, caijing; zhang, xiangfeng; sun, weiguo] luoyang optoelect inst, luoyang, peoples r china; [zhao, degang; zhu, jianjun; sun, baojuan] chinese acad sci, inst semicond, beijing 100083, peoples r china; [qu, bo] jordan valley semicond uk ltd, durham, england |
Abstract | The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be. |
Keyword | Alxga1-xn |
Subject Area | 半导体材料 |
Funding Organization | Mat Res Soc.; Chinese Mat Res Soc. |
Indexed By | 其他 |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/8312 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China. |
Recommended Citation GB/T 7714 | Zhao L,Lu ZX,Cheng CJ,et al. Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2009:PTS 1 AND 2,610-613,: 598-603 Part 1-2. |
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