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无权访问的条目 期刊论文
作者:  Liu XF (Liu Xing-Fang);  Sun GS (Sun Guo-Sheng);  Li JM (Li Jin-Min);  Zhao YM (Zhao Yong-Mei);  Li JY (Li Jia-Ye);  Wang L (Wang Lei);  Zhao WS (Zhao Wan-Shun);  Zeng YP (Zeng Yi-Ping);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. E-mail: liuxf@mail.semi.ac.cn
Adobe PDF(580Kb)  |  收藏  |  浏览/下载：1333/335  |  提交时间：2010/04/11
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1322/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1517/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
无权访问的条目 期刊论文
作者:  Liu XF;  Sun GS;  Li JM;  Ning J;  Luo MC;  Wang L;  Zhao WS;  Zeng YP;  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: liuxf@mail.semi.ac.cn
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：1302/317  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Xu, Y (Xu Ying);  Liao, XB (Liao Xianbo);  Diao, HW (Diao Hongwei);  Li, XD (Li Xudong);  Zeng, XB (Zeng Xiangbo);  Liu, XP (Liu Xiaoping);  Wang, MH (Wang Minhua);  Wang, WJ (Wang Wenjing);  Xu, Y, Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. 电子邮箱地址: yingxu@red.semi.ac.cn
Adobe PDF(351Kb)  |  收藏  |  浏览/下载：1156/374  |  提交时间：2010/03/29
无权访问的条目 期刊论文
作者:  Liu Z;  Wang JX;  Wang XL;  Hu GX;  Guo LC;  Liu HX;  Li JP;  Li JM;  Zeng YP;  Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: jxwang@red.semi.ac.cn
Adobe PDF(153Kb)  |  收藏  |  浏览/下载：907/237  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1168/503  |  提交时间：2010/04/11
Research on the band-gap of InN grown on siticon substrates 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1364/408  |  提交时间：2010/03/29
Molecular-beam Epitaxy  Wurtzite Inn  Nitride  Absorption  Alloys  Films  
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Liu, Z;  Wang, JX;  Wang, XL;  Hu, GX;  Guo, LC;  Liu, HX;  Li, JP;  Li, JM;  Zeng, YP;  Wang, JX, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: jxwang@red.semi.ac.cn
Adobe PDF(253Kb)  |  收藏  |  浏览/下载：1579/543  |  提交时间：2010/03/29
Surface Morphology  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1230/281  |  提交时间：2010/03/29
4h-sic