Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
	Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng); Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
	2006
会议名称	2nd Asian Conference on Nanoscience and Nanotechnology
会议录名称	International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series
页码	Vol 5 No 6 5 (6): 721-727
会议日期	NOV 24-27, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
部门归属	chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
摘要	Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.
关键词	Inas Quantum Dot Photoluminescence Modulation-doped Field Effect Transistor Mu-m Capping Layer
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9812
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zeng, YX ,Liu, W ,Yang, FH ,et al. Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors[C]. PO BOX 128 FARRER RD, SINGAPORE 9128, SINGAPORE:WORLD SCIENTIFIC PUBL CO PTE LTD,2006:Vol 5 No 6 5 (6): 721-727.

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