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Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Yue GZ;  Liu XL;  Wang XH;  Wang CX;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1011/0  |  提交时间：2010/10/29
Metastability  Antisite  
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：916/0  |  提交时间：2010/10/29
Sapphire  
Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Gong Q;  Liang JB;  Xu B;  Wang ZG;  Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1001/177  |  提交时间：2010/10/29
Threshold  Operation  Layer  
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:  Mo QW;  Fan TW;  Gong Q;  Wu J;  Wang ZG;  Bai YQ;  Zhang W;  Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1424/316  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Coherent Islands  Gaas  Growth  Dots  Dislocations  Temperature  Mechanisms  Si(001)  Ingaas  
The role of hydrogen in semi-insulating INP 会议论文
HYDROGEN IN SEMICONDUCTORS AND METALS, 513, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Liu XL;  Jiao JH;  Qian JJ;  Chen YH;  Wang ZG;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1021/0  |  提交时间：2010/10/29
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1333/301  |  提交时间：2010/11/15
Znse/gaas Interface  States  
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials 会议论文
REVISTA MEXICANA DE FISICA, 44, OAXACA, MEXICO, JAN 11-16, 1998
作者:  Zou LF;  Acosta-Ortiz SE;  Zou LX;  Regalado LE;  Sun DZ;  Wang ZG;  Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico. 电子邮箱地址: lfzou@ags.ciateq.mx
Adobe PDF(850Kb)  |  收藏  |  浏览/下载：1161/187  |  提交时间：2010/11/15
Strain Relaxation  Heterostructures  
Twin and grain boundary in InP: A synchrotron radiation study 会议论文
APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 524, SAN FRANCISCO, CA, APR 13-17, 1998
作者:  Han YJ;  Jiang JH;  Wang ZG;  Liu XL;  Jiao JH;  Tian YL;  Lin LY;  Han YJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1042Kb)  |  收藏  |  浏览/下载：1086/178  |  提交时间：2010/10/29
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 会议论文
REVISTA MEXICANA DE FISICA, 44, OAXACA, MEXICO, JAN 11-16, 1998
作者:  Zou LF;  Acosta-Ortiz SE;  Zou LX;  Regalado LE;  Sun DZ;  Wang ZG;  Zou LF Ctr Invest Opt AC Unidad Aguascalientes Juan Montoro 207Zona Ctr Aguascalientes 20000 Ags Mexico.
Adobe PDF(1208Kb)  |  收藏  |  浏览/下载：1337/219  |  提交时间：2010/11/15
Electrical-properties  Ion-implantation  Regrowth  Silicon  Layers