The role of hydrogen in semi-insulating INP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The role of hydrogen in semi-insulating INP
	Han YJ; Liu XL; Jiao JH; Qian JJ; Chen YH; Wang ZG; Lin LY; Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Symposium on Hydrogen in Semiconductors and Metals at the Materials-Research-Society Spring Meeting
会议录名称	HYDROGEN IN SEMICONDUCTORS AND METALS, 513
页码	247-251
会议日期	APR 13-17, 1998
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-419-X
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen cam passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap. Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.. H-2) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H-2 may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13849
专题	中国科学院半导体研究所（2009年前）
通讯作者	Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Han YJ,Liu XL,Jiao JH,et al. The role of hydrogen in semi-insulating INP[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:247-251.