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Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1325/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes  
无权访问的条目 期刊论文
作者:  Liu XF;  Sun GS;  Li JM;  Ning J;  Luo MC;  Wang L;  Zhao WS;  Zeng YP;  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: liuxf@mail.semi.ac.cn
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：1302/317  |  提交时间：2010/03/29
The ICP etching technology of 3C-SiC films 会议论文
INTERNATIONAL MEMS CONFERENCE 2006, 34: 511-515 2006, Singapore, SINGAPORE, MAY 09-12, 2006
作者:  Ning J (Ning Jin);  Gong QC (Gong Quancheng);  Sun GS (Sun Guosheng);  Liu ZL (Liu Zhongli)
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1692/476  |  提交时间：2011/07/14