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Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:  Chen NF;  Zhong XG;  Lin LY;  Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：861/0  |  提交时间：2010/10/29
Semiinsulating Gallium-arsenide  Crystals  Defects  
Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Zhuang QD;  Li JM;  Zeng YP;  Pan L;  Chen YH;  Kong MY;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Novel Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1380/321  |  提交时间：2010/11/15
InGaas Gaas Quantum Dots  Infrared Absorption  Self-organization  X-ray-diffraction  Islands  Transitions  
Structural properties of SI-GaAs grown in space 会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
作者:  Chen NF;  Wang YT;  Zhong XR;  Lin LY;  Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：914/0  |  提交时间：2010/11/15
Semiinsulating Gallium-arsenide  Microgravity  Stoichiometry