Stoichiometry in GaAs grown in outer space measured nondestructively

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	Stoichiometry in GaAs grown in outer space measured nondestructively
	Chen NF; Zhong XG; Lin LY; Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	9th International Symposium on Nondestructive Characterization of Materials
会议录名称	NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497
页码	669-674
会议日期	JUN 28-JUL 02, 1999
会议地点	SYDNEY, AUSTRALIA
出版地	2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
出版者	AMER INST PHYSICS
ISSN	0094-243X
ISBN	1-56396-911-4
部门归属	chinese acad sci, lab semicond mat sci, inst semicond, beijing 100083, peoples r china
摘要	A semi-insulating (SI) GaAs single crystal ingot was successfully grown in a recoverable satellite. The two-dimensional distribution of stoichiometry in space-grown SI-GaAs single crystal wafer was studied nondestructively based upon x-ray Band diffraction. The avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown SI-GaAs. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2). This result indicates that the structural properly of the crystal is quite good.
关键词	Semiinsulating Gallium-arsenide Crystals Defects
学科领域	半导体材料
主办者	Amer Soc Nondestruct Testing.; NASA, Langley Res Ctr.; Natl Sci Fdn.; USN, Off Res.; USA, Res Off Far E.; USAF, Asian Off Aerosp R&D.; USN, Off Res Int Field Off Asia.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13757
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen NF,Zhong XG,Lin LY,et al. Stoichiometry in GaAs grown in outer space measured nondestructively[C]. 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,1999:669-674.