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1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1510/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1736/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Zhang ZC;  Ren BY;  Chen YH;  Yang SY;  Wang ZG;  Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(389Kb)  |  收藏  |  浏览/下载：1363/254  |  提交时间：2010/11/15
Czochralski Method  Growth From Melt  Semiconductor Silicon  Argon Gas Flow  Computer Simulation  Oxygen Content  Furnace Pressure  
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li Q;  Fang ZL;  Xu SJ;  Li GH;  Xie MH;  Tong SY;  Zhang XH;  Liu W;  Chua SJ;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1445/249  |  提交时间：2010/11/15
Piezoelectric Field  Photoluminescence  Temperature  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载：1405/242  |  提交时间：2010/11/15
Molecular-beam Epitaxy