Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

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	Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
	Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG; Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	2003
会议名称	IUMRS/ICEM 2002 Conference
会议录名称	MICROELECTRONIC ENGINEERING, 66 (1-4)
页码	504-509
会议日期	JUN 10-14, 2002
会议地点	XIAN, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0167-9317
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china; hebei univ technol, inst semicond, tianjin 300130, peoples r china
摘要	Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	Czochralski Method Growth From Melt Semiconductor Silicon Argon Gas Flow Computer Simulation Oxygen Content Furnace Pressure
学科领域	半导体材料
主办者	Chinese Mat Res Soc.; Int Union Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14853
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang ZC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang ZC,Ren BY,Chen YH,et al. Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2003:504-509.

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