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1.3微米高密度量子点结构及其制备方法 专利
专利类型: 发明, 申请日期: 2006-06-14, 公开日期: 2009-06-04, 2009-06-11
发明人:  牛智川;  方志丹;  倪海桥;  韩勤;  龚政;  张石勇;  佟存柱;  彭红玲;  吴东海;  赵欢;  吴荣汉
Adobe PDF(629Kb)  |  收藏  |  浏览/下载：1701/227  |  提交时间：2009/06/11
无权访问的条目 期刊论文
作者:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Han Q;  Du Y;  Yang XH;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn
Adobe PDF(185Kb)  |  收藏  |  浏览/下载：1296/288  |  提交时间：2010/04/11
GaAs 基1.3-1.55μm GaInNAs(Sb)量子阱及激光器、探测器的分子束外延生长 学位论文
, 北京: 中国科学院半导体研究所, 2006
作者:  张石勇
Adobe PDF(1761Kb)  |  收藏  |  浏览/下载：900/46  |  提交时间：2009/04/13
无权访问的条目 期刊论文
作者:  Zhao H;  Xu YQ;  Ni HQ;  Zhang SY;  Wu DH;  Han Q;  Wu RH;  Niu ZC;  Zhao, H, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn
Adobe PDF(78Kb)  |  收藏  |  浏览/下载：1306/333  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wu DH;  Niu ZC;  Zhang SY;  Ni HQ;  He ZH;  Zhao H;  Peng HL;  Yang XH;  Han Q;  Wu RH;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail: zcniu@red.semi.ac.cn
Adobe PDF(507Kb)  |  收藏  |  浏览/下载：1084/303  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Wu DH;  Niu ZC;  Zhang SY;  Ni HQ;  He ZH;  Sun Z;  Han Q;  Wu RH;  Wu, DH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. E-mail: wudonghai@red.semi.ac.cn;  zcniu@red.semi.ac.cn
Adobe PDF(261Kb)  |  收藏  |  浏览/下载：1217/425  |  提交时间：2010/04/11
无权访问的条目 期刊论文
作者:  Sun Z;  Xu ZY;  Yang XD;  Sun BQ;  Ji Y;  Zhang SY;  Ni HQ;  Niu ZC;  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. E-mail: zyxu@red.semi.ac.cn
Adobe PDF(67Kb)  |  收藏  |  浏览/下载：1341/451  |  提交时间：2010/04/11
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1497/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1724/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation