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GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文
COMMAD 2000 PROCEEDINGS, BUNDOORA, AUSTRALIA, DEC 06-08, 2000
作者:  Pan Z;  Li LH;  Wang XY;  Lin YW;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1214/224  |  提交时间：2010/10/29
Operation  会议主办方: La Trobe Univ  Depts Electr Engn & Phys  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1234/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Tunable MQW-DBR lasers using selective area growth 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Liu GL;  Wang W;  Zhang JY;  Chen WX;  Xu GY;  Zhang BJ;  Zhou F;  Wang XJ;  Zhu HL;  Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(199Kb)  |  收藏  |  浏览/下载：1597/418  |  提交时间：2010/10/29
Selective Area Growth  Multi-quantum-well  Distributed Bragg Reflector Laser  Mocvd  Tunable Laser  Epitaxy  
SiGe/Si quantum well resonant-cavity-enhanced photodetector 会议论文
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 4111, SAN DIEGO, CA, JUL 31-AUG 02, 2000
作者:  Li C;  Yang QQ;  Wang HJ;  Zhu JL;  Luo LP;  Yu JZ;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载：1767/274  |  提交时间：2010/10/29
Rce Photodetector  Sige/si  Simox  Bragg Reflector  
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
IN-PLANE SEMICONDUCTOR LASERS IV, 3947, SAN JOSE, CA, JAN 24-25, 2000
作者:  Xiu ZT;  Zhang JM;  Ma XY;  Yang GW;  Shen GD;  Chen LH;  Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1733/403  |  提交时间：2010/10/29
Sqw Lasers  Ingaasp  Power  Fiber  Nm  
Si-based resonant-cavity-enhanced photodetector 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Wang QM;  Li C;  Cheng BW;  Yang QQ;  Wang QM Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1545/208  |  提交时间：2010/11/15
Rce Photodetector  Sige/si  Simox  Bragg Reflector  Top-illumination  Bottom-illumination  Responsivity Spectra  
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes 会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:  Lu LW;  Zhang YH;  Xu ZT;  Xu ZY;  Wang ZG;  Wang J;  Ge WK;  Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(245Kb)  |  收藏  |  浏览/下载：1337/368  |  提交时间：2010/11/15
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:  Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W;  Lin YW Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(195Kb)  |  收藏  |  浏览/下载：1547/289  |  提交时间：2010/11/15
Ganas  Dc Active N-2 Plasma  Molecular Beam Epitaxy  Nitrogen Content  Fourier Transform Infrared Spectroscopy Of Intensity  Band-gap Energy  Gaas1-xnx  Nitrogen  
Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels 会议论文
IEE PROCEEDINGS-OPTOELECTRONICS, 147 (1), CARDIFF, WALES, 1999
作者:  Chen HD;  Liang K;  Zeng QM;  Li XJ;  Chen ZB;  Du Y;  Wu RH;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(545Kb)  |  收藏  |  浏览/下载：1363/326  |  提交时间：2010/11/15
Mqw Modulators  Effect Device  Progress  Circuits  Cmos  
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Chen LH;  Xu ZT;  Ma XY;  Zhang JM;  Yang GW;  Xu JY;  Chen LH Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(271Kb)  |  收藏  |  浏览/下载：1234/283  |  提交时间：2010/11/15
High Power  Al-free Laser  Communication  Epitaxy