中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共34条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
无权访问的条目 期刊论文
作者:  Sun GS;  Liu XF;  Wu HL;  Yan GG;  Dong L;  Zheng L;  Zhao WS;  Wang L;  Zeng YP;  Li XG;  Wang ZG;  Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
Adobe PDF(262Kb)  |  收藏  |  浏览/下载：1390/320  |  提交时间：2011/07/05
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1893/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：2073/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
无权访问的条目 期刊论文
作者:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: jlyang@semi.ac.cn
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1101/423  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhang BL;  Cai FF;  Sun GS;  Fan HB;  Zhang PF;  Wei HY;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangbaoli@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(248Kb)  |  收藏  |  浏览/下载：1309/412  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Fan, HB;  Sun, GS;  Yang, SY;  Zhang, PF;  Zhang, RQ;  Wei, HY;  Jiao, CM;  Liu, XL;  Chen, YH;  Zhu, QS;  Wang, ZG;  Fan, HB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hbfan@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(315Kb)  |  收藏  |  浏览/下载：1440/490  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhao, YM;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, WS;  Wang, L;  Li, JM;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: ymzhao@semi.ac.cn
Adobe PDF(4488Kb)  |  收藏  |  浏览/下载：978/232  |  提交时间：2010/03/08
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1545/225  |  提交时间：2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  收藏  |  浏览/下载：1599/274  |  提交时间：2010/03/09
Micromechanical Resonators  Frequency  
无权访问的条目 期刊论文
作者:  Zhang BL;  Sun GS;  Guo Y;  Zhang PF;  Zhang RQ;  Fan HB;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang BL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: zhangbaoli@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(256Kb)  |  收藏  |  浏览/下载：1173/338  |  提交时间：2010/03/08