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Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Peng CS;  Chen H;  Zhao ZY;  Li JH;  Dai DY;  Huang Q;  Zhou JM;  Zhang YH;  Tung CH;  Sheng TT;  Wang J;  Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)  |  收藏  |  浏览/下载：1547/311  |  提交时间：2010/11/15
Threading Dislocation  Si(100)  Layers  Films  
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu JP;  Kong MY;  Liu XF;  Li JP;  Huang DD;  Li LX;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1490/272  |  提交时间：2010/11/15
Stranski-krastanow Growth  Quantum Dots  Relaxation  Inas  
The effects of carbonized buffer layer on the growth of SiC on Si 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Wang YS;  Li JM;  Zhang FF;  Lin LY;  Wang YS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(160Kb)  |  收藏  |  浏览/下载：1102/244  |  提交时间：2010/11/15
Heteroepitaxial Growth  Hydrocarbon Radicals  Si(001) Surface  Beam  
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Liu XF;  Liu JP;  Li JP;  Wang YT;  Li LY;  Sun DZ;  Kong MY;  Lin LY;  Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
收藏  |  浏览/下载：947/0  |  提交时间：2010/11/15
Layers