Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes
	Liu XF; Liu JP; Li JP; Wang YT; Li LY; Sun DZ; Kong MY; Lin LY; Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
	1999
会议名称	10th International Conference on Molecular Beam Epitaxy (MBE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 201
页码	551-555
会议日期	AUG 31-SEP 04, 1998
会议地点	CANNES, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china
摘要	Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Layers
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15033
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu XF,Liu JP,Li JP,et al. Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:551-555.