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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Temporal Differential CMOS Image Sensor for Low-Light and High-Speed Applications
会议论文
International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, Beijing, PEOPLES R CHINA, 2011
作者:
Guan N (Guan Ning)
;
Zhang X (Zhang Xu)
;
Dong Z (Dong Zan)
;
Wang W (Wang Wei)
;
Gui Y (Gui Yun)
;
Han JQ (Han Jianqiang)
;
Wang Y (Wang Yuan)
;
Huang BJ (Huang Beiju)
;
Chen HD (Chen Hongda)
Adobe PDF(516Kb)
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浏览/下载:2103/510
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提交时间:2011/12/13
Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices
会议论文
NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:
Jin P (Jin P.)
;
Lv XQ (Lv X. Q.)
;
Liu N (Liu N.)
;
Zhang ZY (Zhang Z. Y.)
;
Wang ZG (Wang Z. G.)
;
Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: zgwang@red.semi.ac.cn
Adobe PDF(141Kb)
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浏览/下载:1781/330
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提交时间:2010/11/01
Superluminescent Diodes
Ordered FePt Nanoparticle Arrays Prepared by a Micellar Method
会议论文
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:
Gao Y (Gao Y.)
;
Zhang XW (Zhang X. W.)
;
Qu S (Qu S.)
;
You JB (You J. B.)
;
Yin ZG (Yin Z. G.)
;
Chen NF (Chen N. F.)
;
Zhang, XW, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: xwzhang@semi.ac.cn
Adobe PDF(567Kb)
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浏览/下载:1957/410
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提交时间:2010/11/01
Observation of photogalvanic current for interband absorption in InN films at room temperature
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Tang, CG
;
Chen, YH
;
Liu, Y
;
Zhang, RQ
;
Liu, XL
;
Wang, ZG
;
Zhang, R
;
Zhang, Z
;
Tang, CG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(236Kb)
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浏览/下载:1987/374
  |  
提交时间:2010/03/09
Quantum-wells
Spin
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:
Niu, ZC
;
Zhang, SY
;
Ni, HQ
;
Wu, DH
;
He, ZH
;
Sun, Z
;
Han, Q
;
Wu, RG
;
Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)
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浏览/下载:1601/372
  |  
提交时间:2010/03/29
Improved Luminescence Efficiency
Temperature
Photoluminescence
Nitrogen
Origin
Diodes
The study of high temperature annealing of a-SiC : H films
会议论文
ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM, Aveiro, PORTUGAL, MAR 20-23, 2005
作者:
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
;
Zhang, S, Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(1210Kb)
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浏览/下载:1551/209
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提交时间:2010/03/29
Silicon Carbide
High Temperature Annealing
Thin Film
Silicon
Pecvd
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
;
Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)
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浏览/下载:1844/401
  |  
提交时间:2010/03/29
Gainnas/gaas Quantum Wells
Optical Properties
Nonradiative Recombination Effect
Time-resolved Photoluminescence
Pl Decay Dynamics
Pl Thermal Quenching
Molecular-beam Epitaxy
Gaasn Alloys
Excitation
Characterization of polymorphous silicon thin film and solar cells
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Zhang S
;
Xu Y
;
Liao X
;
Martins R
;
Fortunato E
;
Hu Z
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(270Kb)
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浏览/下载:1369/215
  |  
提交时间:2010/10/29
Polymorphous Silicon
Thin Film
Solar Cell
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors
会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:
Zhang W
;
Pan Z
;
Li LH
;
Zhang RK
;
Lin YW
;
Wu RG
;
Zhang W Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:1202/0
  |  
提交时间:2010/10/29
Gainnas
Photodetector
Resonant Cavity Enhanced
High Speed Property
Molecular-beam Epitaxy
Schottky Photodiodes
Performance
Efficiency
Operation
Bandwidth
Design
Si
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
;
Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)
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浏览/下载:1350/219
  |  
提交时间:2010/11/15
Adsorption
Characterization
Radiation
Molecular Beam Epitaxy
Nitrides
Surface-emitting Laser
Quantum-wells
Operation
Range