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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法
汤宝; 周志强; 郝瑞亭; 任正伟; 徐应强; 牛智川
2009-11-11
Rights Holder中科院半导体研究所
Date Available4012
Country中国
Subtype发明
Application Date2008-05-09
Language中文
Status公开
Application NumberCN200810106276
Patent Agent汤宝平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/9026
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 汤宝,周志强,郝瑞亭,等. GaAs基InAs/GaSb超晶格近红外光电探测器及其制作方法[P]. 2009-11-11.
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3448.pdf（573KB） 限制开放--Application Full Text
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