Fabrication method of silicon nanostructures by anisotropic etching

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication method of silicon nanostructures by anisotropic etching
	Han, WH; Yang, X; Wang, Y; Yang, FH; Yu, JZ; Han, WH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	5th IEEE International Conference on Group IV Photonics
会议录名称	2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	: 146-148
会议日期	SEP 17-19, 2008
会议地点	Sorrento, ITALY
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1769-8
部门归属	[han, weihua; yang, xiang; wang, ying; yang, fuhua; yu, jinzhong] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.
学科领域	光电子学
主办者	IEEE.; Informat Soc Technol.; Helios.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8346
专题	中国科学院半导体研究所（2009年前）
通讯作者	Han, WH, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Han, WH,Yang, X,Wang, Y,et al. Fabrication method of silicon nanostructures by anisotropic etching[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:: 146-148.