Simulation of single electronic device and robust circuit construction

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Simulation of single electronic device and robust circuit construction
	Zhou, KD; Lu, HX; Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.
	2007
会议名称	IEEE International Conference on Control and Automation
会议录名称	2007 IEEE INTERNATIONAL CONFERENCE ON CONTROL AND AUTOMATION
页码	VOLS 1-7: 2703-2705
会议日期	MAY 30-JUN 01, 2007
会议地点	Guangzhou, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-0817-7
部门归属	[zhou, kongdan; lu, huaxiang] chinese acad sci, inst semicond, lab artificial neural networks, beijing 100864, peoples r china
摘要	The article mainly focuses on the simulation of the single electron device and circuit. The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article. Moreover, the built of robust circuit using single electronic according to neural network is done and the simulation is also included in the paper. The result shows that neural network added with proper redundancy is an available candidate for single electron device circuit. The proposed structure is also promising for the realization of low ultra-low power consumption and solution of transient device failure.
关键词	Single Electronic Device Neural Network
学科领域	人工智能
主办者	IEEE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7768
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, KD,Lu, HX,Zhou, KD, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100864, Peoples R China.. Simulation of single electronic device and robust circuit construction[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2007:VOLS 1-7: 2703-2705.

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