HfO2铁电层和硅纳米线的缺陷性质研究

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	HfO2铁电层和硅纳米线的缺陷性质研究
	张才鑫
Subtype	博士后
	2024-05
Degree Grantor	中国科学院大学
Place of Conferral	中国科学院半导体研究所
Language	中文
Date Available	2024-06
Document Type	学位论文
Identifier	http://ir.semi.ac.cn/handle/172111/31854
Collection	中国科学院半导体研究所
Recommended Citation GB/T 7714	张才鑫. HfO2铁电层和硅纳米线的缺陷性质研究[D]. 中国科学院半导体研究所. 中国科学院大学,2024.

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