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HfO2铁电层和硅纳米线的缺陷性质研究
张才鑫
Subtype博士后
2024-05
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2024-06
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/31854
Collection中国科学院半导体研究所
Recommended Citation
GB/T 7714
张才鑫. HfO2铁电层和硅纳米线的缺陷性质研究[D]. 中国科学院半导体研究所. 中国科学院大学,2024.
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GK2024151-博士后出站报告-张才(4697KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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