SEMI OpenIR  > 半导体集成技术工程研究中心
4H-SiC UMOSFETs 器件设计与关键工艺研发
郭志煜
Subtype博士
2022-06
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2022-06
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/31084
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
郭志煜. 4H-SiC UMOSFETs 器件设计与关键工艺研发[D]. 中国科学院半导体研究所. 中国科学院大学,2022.
Files in This Item:
File Name/Size DocType Version Access License
GK2022114-博士-集成中心-郭志(10262KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[郭志煜]'s Articles
Baidu academic
Similar articles in Baidu academic
[郭志煜]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[郭志煜]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.