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Fabrication and characterization of normally-off AlGaNGaN HEMTs
Aqdas Fariza
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Date Available2021-12
Document Type学位论文
Recommended Citation
GB/T 7714
Aqdas Fariza. Fabrication and characterization of normally-off AlGaNGaN HEMTs[D]. 中国科学院半导体研究所. 中国科学院大学,2021.
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2022034-gk-博士后-照明中心-(2143KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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