| Fabrication and characterization of normally-off AlGaNGaN HEMTs | |
| Aqdas Fariza | |
| Subtype | 博士后 |
| 2021-12 | |
| Degree Grantor | 中国科学院大学 |
| Place of Conferral | 中国科学院半导体研究所 |
| Date Available | 2021-12 |
| Document Type | 学位论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/30621 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Aqdas Fariza. Fabrication and characterization of normally-off AlGaNGaN HEMTs[D]. 中国科学院半导体研究所. 中国科学院大学,2021. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2022034-gk-博士后-照明中心-（2143KB） | 学位论文 | 限制开放 | CC BY-NC-SA | Application Full Text | ||
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