SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAsGaAsSb量子点材料可控生长及分布反馈激光器光栅结构研究
陆光泽
Subtype硕士
2020-07
Degree Grantor中国科学院大学
Place of Conferral中国科学院半导体研究所
Language中文
Date Available2020-07
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29916
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
陆光泽. InAsGaAsSb量子点材料可控生长及分布反馈激光器光栅结构研究[D]. 中国科学院半导体研究所. 中国科学院大学,2020.
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2020137-公开-陆光泽-硕士-In(3169KB)学位论文 限制开放CC BY-NC-SAApplication Full Text
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