SEMI OpenIR  > 光电子研究发展中心
高通量硅基神经微电极的性能改进研究
王飞
Subtype硕士
Thesis Advisor裴为华
2018-05-12
Degree Grantor中国科学院大学
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Keyword高通量 硅电极 光噪声 Cmos工艺 应力
Subject Area半导体器件
Date Available2018-05-31
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28444
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
王飞. 高通量硅基神经微电极的性能改进研究[D]. 北京. 中国科学院大学,2018.
Files in This Item:
File Name/Size DocType Version Access License
高通量硅基神经微电极的性能改进研究.pd(5165KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[王飞]'s Articles
Baidu academic
Similar articles in Baidu academic
[王飞]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[王飞]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.