| P型GaN材料生长及性能表征 | |
| liushuangtao | |
| Subtype | 硕士 |
| Thesis Advisor | 赵德刚 |
| 2017-05-25 | |
| Degree Grantor | 中国科学院研究生院 |
| Place of Conferral | 北京 |
| Degree Discipline | 电子与通信工程 |
| Keyword | Mocvd P-gan 退火 Mg受主激活 |
| Subject Area | 半导体材料 |
| Date Available | 2017-06-02 |
| Document Type | 学位论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/28181 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | liushuangtao. P型GaN材料生长及性能表征[D]. 北京. 中国科学院研究生院,2017. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 刘双韬毕业论文2017.pdf（2557KB） | 限制开放 | License | Application Full Text | |||
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