SEMI OpenIR  > 光电子研究发展中心
P型GaN材料生长及性能表征
liushuangtao
Subtype硕士
Thesis Advisor赵德刚
2017-05-25
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline电子与通信工程
KeywordMocvd P-gan 退火 Mg受主激活
Subject Area半导体材料
Date Available2017-06-02
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28181
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
liushuangtao. P型GaN材料生长及性能表征[D]. 北京. 中国科学院研究生院,2017.
Files in This Item:
File Name/Size DocType Version Access License
刘双韬毕业论文2017.pdf(2557KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[liushuangtao]'s Articles
Baidu academic
Similar articles in Baidu academic
[liushuangtao]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[liushuangtao]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.