单芯片多电极调控多波长发光二极管结构及制备方法 | |
赵博; 李晋闽; 伊晓燕; 郭金霞; 马骏; 刘志强 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-28 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2015-01-07 |
Application Number | CN201510006038.4 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27620 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 赵博,李晋闽,伊晓燕,等. 单芯片多电极调控多波长发光二极管结构及制备方法. |
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File Name/Size | DocType | Version | Access | License | ||
单芯片多电极调控多波长发光二极管结构及制(528KB) | 限制开放 | License | Application Full Text |
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