| 偏[111]晶向锗单晶片位错显示用腐蚀液及腐蚀方法 | |
| 曹可慰; 赵有文 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-22 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2015-05-21 |
| Application Number | CN201510261309.0 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27491 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 曹可慰,赵有文. 偏[111]晶向锗单晶片位错显示用腐蚀液及腐蚀方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 偏[111]晶向锗单晶片位错显示用腐蚀液（1374KB） | 限制开放 | License | Application Full Text | |||
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