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倒装阳极的纳米真空三极管结构及制备方法
梁锋; 陈平; 赵德刚; 侍铭; 刘宗顺; 江德生
Rights Holder中国科学院半导体所
Date Available2016-09-22
Country中国
Subtype发明
Subject Area光电子学
Application Date2015-08-24
Application NumberCN201510520866.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27476
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
梁锋,陈平,赵德刚,等. 倒装阳极的纳米真空三极管结构及制备方法.
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