| 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法 | |
| 李晓静; 赵德刚; 江德生; 刘宗顺; 朱建军; 陈平 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-12 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2014-11-17 |
| Application Number | CN201410652670.1 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27467 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 李晓静,赵德刚,江德生,等. 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 降低Ni_Au与p-GaN欧姆接触的比接（423KB） | 限制开放 | License | Application Full Text | |||
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