斜腔半导体光放大器的耦合方法 | |
于丽娟; 王玮钰; 袁海庆; 刘建国; 祝宁华 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-12 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 光电子学 |
Application Date | 2014-12-17 |
Application Number | CN201410784618.1 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27448 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | 于丽娟,王玮钰,袁海庆,等. 斜腔半导体光放大器的耦合方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
斜腔半导体光放大器的耦合方法.pdf(280KB) | 限制开放 | License | Application Full Text |
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