栅极与源漏极异面的GaN基HEMT的结构及其制作方法 | |
程哲; 张韵; 张连 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-12 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2015-08-25 |
Application Number | CN201510524897.2 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27439 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 程哲,张韵,张连. 栅极与源漏极异面的GaN基HEMT的结构及其制作方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
栅极与源漏极异面的GaN基HEMT的结构(354KB) | 限制开放 | License | Application Full Text |
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