低电阻率低温P型铝镓氮材料的制备方法 | |
杨静; 赵德刚; 陈平; 刘宗顺; 江德生 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-08-30 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 光电子学 |
Application Date | 2014-08-26 |
Application Number | CN201410426219.8 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27326 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | 杨静,赵德刚,陈平,等. 低电阻率低温P型铝镓氮材料的制备方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
低电阻率低温P型铝镓氮材料的制备方法.p(327KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment