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利用相对易腐蚀的金属制备另一种金属图形的剥离方法
杨健; 司朝伟; 韩国威; 宁瑾; 赵永梅; 梁秀琴
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area微电子学
Application Date2014-09-26
Application NumberCN201410500353.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27302
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
杨健,司朝伟,韩国威,等. 利用相对易腐蚀的金属制备另一种金属图形的剥离方法.
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