| InGaN/AlInGaN多量子阱太阳能电池结构 | |
| 杨静; 赵德刚; 乐伶聪; 李晓静; 何晓光 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-08-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2014-10-29 |
| Application Number | CN201410592387.4 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27294 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 杨静,赵德刚,乐伶聪,等. InGaN/AlInGaN多量子阱太阳能电池结构. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| InGaN_AlInGaN多量子阱太阳能（338KB） | 限制开放 | License | Application Full Text | |||
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