| 增强聚对二甲苯薄膜与金属层粘附性的方法 | |
| 裴为华; 国冬梅; 陈远方; 张贺; 陈弘达 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-08-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2014-10-14 |
| Application Number | CN201410541559.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27285 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 裴为华,国冬梅,陈远方,等. 增强聚对二甲苯薄膜与金属层粘附性的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 增强聚对二甲苯薄膜与金属层粘附性的方法.（277KB） | 限制开放 | License | Application Full Text | |||
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