Knowledge Management System Of Institute of Semiconductors,CAS
| 一种获得厚度大于10nm的室温铁磁性(Ga，Mn)As薄膜的方法 | |
| 赵建华; 王海龙 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-08-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体物理 |
| Application Date | 2014-10-17 |
| Application Number | CN201410552789.1 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27284 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | 赵建华,王海龙. 一种获得厚度大于10nm的室温铁磁性(Ga，Mn)As薄膜的方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 一种获得厚度大于10nm的室温铁磁性(G（601KB） | 限制开放 | License | Application Full Text | |||
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