| 提高Si衬底LED出光效率的外延结构及制备方法 | |
| 张宁; 任鹏; 刘喆; 李晋闽; 王军喜 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-08-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2014-12-24 |
| Application Number | CN201410816545.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27267 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 张宁,任鹏,刘喆,等. 提高Si衬底LED出光效率的外延结构及制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 提高Si衬底LED出光效率的外延结构及制（340KB） | 限制开放 | License | Application Full Text | |||
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