SEMI OpenIR  > 光电子研究发展中心
传感芯片及其制备方法
陈弘达; 袁浚; 解意洋; 阚强; 耿照新
Rights Holder中国科学院半导体所
Date Available2016-08-30
Country中国
Subtype发明
Subject Area光电子学
Application Date2014-12-24
Application NumberCN201410822223.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/27250
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
陈弘达,袁浚,解意洋,等. 传感芯片及其制备方法.
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传感芯片及其制备方法.pdf(806KB) 限制开放LicenseApplication Full Text
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