| GaN基发光二极管的制备方法 | |
| 黄亚军; 王莉; 樊中朝; 刘志强; 伊晓燕 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-07-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2014-05-08 |
| Application Number | CN201410192628.6 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25929 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 黄亚军,王莉,樊中朝,等. GaN基发光二极管的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| GaN基发光二极管的制备方法.pdf（405KB） | 限制开放 | License | Application Full Text | |||
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