晶圆级发光二极管阵列结构的制备方法 | |
杨华; 薛斌; 于飞; 谢海忠; 卢鹏志; 李璟; 伊晓燕; 王军喜; 李晋闽 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2013-05-15 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2013-02-05 |
Application Number | CN201310045572.7 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25853 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 杨华,薛斌,于飞,等. 晶圆级发光二极管阵列结构的制备方法. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
晶圆级发光二极管阵列结构的制备方法.pd(344KB) | 限制开放 | License | Application Full Text |
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