植入空气隙光子晶体的氮化镓基发光二极管的制备方法 | |
杜成孝; 郑海洋; 魏同波; 王军喜; 李晋闽 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2013-06-26 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2013-03-19 |
Application Number | CN201310088324.0 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25835 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | 杜成孝,郑海洋,魏同波,等. 植入空气隙光子晶体的氮化镓基发光二极管的制备方法. |
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植入空气隙光子晶体的氮化镓基发光二极管的(914KB) | 限制开放 | License | Application Full Text |
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