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植入空气隙光子晶体的氮化镓基发光二极管的制备方法
杜成孝; 郑海洋; 魏同波; 王军喜; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-06-26
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-03-19
Application NumberCN201310088324.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25835
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
杜成孝,郑海洋,魏同波,等. 植入空气隙光子晶体的氮化镓基发光二极管的制备方法.
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