SEMI OpenIR  > 中科院半导体照明研发中心
高压发光二极管芯片及其制造方法
郭金霞; 闫建昌; 伊晓燕; 田婷; 詹腾; 赵勇兵; 宋昌斌; 王军喜
Rights Holder中国科学院半导体研究所
Date Available2013-07-03
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-03-21
Application NumberCN201310091232.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25829
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
郭金霞,闫建昌,伊晓燕,等. 高压发光二极管芯片及其制造方法.
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高压发光二极管芯片及其制造方法.pdf(429KB) 限制开放LicenseApplication Full Text
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