SEMI OpenIR  > 中科院半导体材料科学重点实验室
利用量子阱混杂制作多波长光子集成发射器芯片的方法
张灿; 朱洪亮; 梁松
Rights Holder中国科学院半导体研究所
Date Available2013-11-27
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-08-22
Application NumberCN201310370281.5
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25802
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张灿,朱洪亮,梁松. 利用量子阱混杂制作多波长光子集成发射器芯片的方法.
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