SEMI OpenIR  > 中科院半导体照明研发中心
折射率渐变的光子晶体发光二极管结构
赵玲慧; 马平; 甄爱功; 王军喜; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-06-12
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-03-25
Application NumberCN201310095993.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25781
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
赵玲慧,马平,甄爱功,等. 折射率渐变的光子晶体发光二极管结构.
Files in This Item:
File Name/Size DocType Version Access License
折射率渐变的光子晶体发光二极管结构.pd(309KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[赵玲慧]'s Articles
[马平]'s Articles
[甄爱功]'s Articles
Baidu academic
Similar articles in Baidu academic
[赵玲慧]'s Articles
[马平]'s Articles
[甄爱功]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[赵玲慧]'s Articles
[马平]'s Articles
[甄爱功]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.