SEMI OpenIR  > 中科院半导体照明研发中心
氧化物膜的制备方法
王晓峰; 尹玉华; 李丽娟; 霍自强; 王军喜; 李晋闽; 曾一平
Rights Holder中国科学院半导体研究所
Date Available2014-05-07
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-02-08
Application NumberCN201410045815.1
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25775
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
王晓峰,尹玉华,李丽娟,等. 氧化物膜的制备方法.
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