SEMI OpenIR  > 中科院半导体材料科学重点实验室
光致反常霍尔效应的变温测量装置及测量方法
朱来攀; 陈涌海; 刘雨; 俞金玲; 蒋崇云
Rights Holder中国科学院半导体研究所
Date Available2014-05-21
Country中国
Subtype发明
Subject Area半导体材料
Application Date2014-02-13
Application NumberCN201410050256.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25770
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
朱来攀,陈涌海,刘雨,等. 光致反常霍尔效应的变温测量装置及测量方法.
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